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SIHD5N80AE-GE3

¥7.85
单 FET、MOSFET

E SERIES POWER MOSFET DPAK (TO-2

参数名称参数值
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800 V
Current - Continuous Drain (Id) @ 25°C4.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.35Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs16.5 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds321 pF @ 100 V
FET Feature-
Power Dissipation (Max)62.5W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252AA
Package/ CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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Vishay/ Siliconix 单 FET、MOSFET 产品 SIHD5N80AE-GE3

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