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CSD19534Q5AT

¥8.71
单 FET、MOSFET

MOSFET N-CH 100V 50A 8VSON

参数名称参数值
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C44A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs15.1mOhm @ 10A, 10V
Vgs(th) (Max) @ Id3.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs22 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1680 pF @ 50 V
FET Feature-
Power Dissipation (Max)3.2W (Ta), 63W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-VSONP (5x6)
Package/ Case8-PowerTDFN

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Texas Instruments 单 FET、MOSFET 产品 CSD19534Q5AT

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