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SIR800ADP-T1-RE3

¥6.77
单 FET、MOSFET

MOSFET N-CH 20V 50.2A/177A PPAK

参数名称参数值
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Current - Continuous Drain (Id) @ 25°C50.2A (Ta), 177A (Tc)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 10V
Rds On (Max) @ Id, Vgs1.35mOhm @ 10A, 10V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs53 nC @ 10 V
Vgs (Max)+12V, -8V
Input Capacitance (Ciss) (Max) @ Vds3415 pF @ 10 V
FET Feature-
Power Dissipation (Max)5W (Ta), 62.5W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8
Package/ CasePowerPAK® SO-8

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Vishay/ Siliconix 单 FET、MOSFET 产品 SIR800ADP-T1-RE3

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