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IRF5802TRPBF

¥5.26
单 FET、MOSFET

MOSFET N-CH 150V 900MA MICRO6

参数名称参数值
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)150 V
Current - Continuous Drain (Id) @ 25°C900mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.2Ohm @ 540mA, 10V
Vgs(th) (Max) @ Id5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs6.8 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds88 pF @ 25 V
FET Feature-
Power Dissipation (Max)2W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageMicro6™(TSOP-6)
Package/ CaseSOT-23-6 Thin, TSOT-23-6

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Infineon Technologies 单 FET、MOSFET 产品 IRF5802TRPBF

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