参数名称 | 参数值 |
---|---|
Product Status | Active |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60 V |
Current - Continuous Drain (Id) @ 25°C | 6.46A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 155mOhm @ 3.5A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 15.5 nC @ 10 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 590 pF @ 25 V |
FET Feature | - |
Power Dissipation (Max) | 13.6W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount, Wettable Flank |
Supplier Device Package | PowerPAK®SC-70W-6 |
Package/ Case | PowerPAK® SC-70-6 |
新闻资讯
Vishay/ Siliconix 单 FET、MOSFET 产品 SQA411CEJW-T1_GE3
作为Vishay/ Siliconix优质且资深的代理服务商,深圳凌创辉电子有限公司在为您采购SQA411CEJW-T1_GE3时,能够保证原装进口的品质保障以外,价格也是业界最优的,找我们买SQA411CEJW-T1_GE3绝对的现货正品,需要报价和咨询请您随时联系我们,同时我们为方便您了解SQA411CEJW-T1_GE3产品详情,我们提供了pdf在线观看参数资料,助您轻松采购。
SQA411CEJW-T1_GE3供应商,SQA411CEJW-T1_GE3现货,SQA411CEJW-T1_GE3代理商,SQA411CEJW-T1_GE3pdf参数资料,买SQA411CEJW-T1_GE3,SQA411CEJW-T1_GE3报价,SQA411CEJW-T1_GE3库存