| 参数名称 | 参数值 |
|---|---|
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 50 V |
| Current - Continuous Drain (Id) @ 25°C | 200mA (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V |
| Rds On (Max) @ Id, Vgs | 2.2Ohm @ 200mA, 4.5V |
| Vgs(th) (Max) @ Id | 800mV @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Vgs (Max) | ±8V |
| Input Capacitance (Ciss) (Max) @ Vds | 26 pF @ 10 V |
| FET Feature | - |
| Power Dissipation (Max) | 350mW (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SST3 |
| Package/ Case | TO-236-3, SC-59, SOT-23-3 |
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ROHM Semiconductor 单 FET、MOSFET 产品 RYC002N05T316
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