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PMZ600UNEYL

¥2.52
单 FET、MOSFET
Nexperia

MOSFET N-CH 20V 600MA DFN1006-3

参数名称参数值
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Current - Continuous Drain (Id) @ 25°C600mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.2V, 4.5V
Rds On (Max) @ Id, Vgs620mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs0.7 nC @ 4.5 V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds21.3 pF @ 10 V
FET Feature-
Power Dissipation (Max)360mW (Ta), 2.7W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-883
Package/ CaseSC-101, SOT-883

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Nexperia 单 FET、MOSFET 产品 PMZ600UNEYL

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