SSM3J35AMFV,L3F
¥1.80
MOSFET P-CH 20V 250MA VESM
参数名称 | 参数值 |
---|---|
Product Status | Active |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20 V |
Current - Continuous Drain (Id) @ 25°C | 250mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 1.2V, 4.5V |
Rds On (Max) @ Id, Vgs | 1.4Ohm @ 150mA, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs | - |
Vgs (Max) | ±10V |
Input Capacitance (Ciss) (Max) @ Vds | 42 pF @ 10 V |
FET Feature | - |
Power Dissipation (Max) | 150mW (Ta) |
Operating Temperature | 150°C |
Mounting Type | Surface Mount |
Supplier Device Package | VESM |
Package/ Case | SOT-723 |
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Toshiba Electronic Devices and Storage Corporation 单 FET、MOSFET 产品 SSM3J35AMFV,L3F
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