参数名称 | 参数值 |
---|---|
Product Status | Obsolete |
IGBT Type | NPT and Trench |
Voltage - Collector Emitter Breakdown (Max) | 1000 V |
Current - Collector (Ic) (Max) | 50 A |
Current - Collector Pulsed (Icm) | 200 A |
Vce(on) (Max) @ Vge, Ic | 2.9V @ 15V, 60A |
Power - Max | 156 W |
Switching Energy | - |
Input Type | Standard |
Gate Charge | 257 nC |
Td (on/off) @ 25°C | 34ns/243ns |
Test Condition | 600V, 60A, 10Ohm, 15V |
Reverse Recovery Time (trr) | 75 ns |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package/ Case | TO-3P-3, SC-65-3 |
Supplier Device Package | TO-3P |
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onsemi 单 IGBT 产品 FGA50N100BNTD2
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