参数名称 | 参数值 |
---|---|
Product Status | Active |
IGBT Type | - |
Voltage - Collector Emitter Breakdown (Max) | 600 V |
Current - Collector (Ic) (Max) | 17 A |
Current - Collector Pulsed (Icm) | 40 A |
Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 3A |
Power - Max | 70 W |
Switching Energy | 37µJ (on), 25µJ (off) |
Input Type | Standard |
Gate Charge | 21 nC |
Td (on/off) @ 25°C | 6ns/73ns |
Test Condition | 390V, 3A, 50Ohm, 15V |
Reverse Recovery Time (trr) | 29 ns |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package/ Case | TO-220-3 |
Supplier Device Package | TO-220-3 |
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onsemi 单 IGBT 产品 HGTP3N60A4D
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