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FGD3440G2-F085

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单 IGBT

INSULATED GATE BIPOLAR TRANSISTO

参数名称参数值
Product StatusActive
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)400 V
Current - Collector (Ic) (Max)26.9 A
Current - Collector Pulsed (Icm)-
Vce(on) (Max) @ Vge, Ic1.2V @ 4V, 6A
Power - Max166 W
Switching Energy-
Input TypeLogic
Gate Charge24 nC
Td (on/off) @ 25°C-/5.3µs
Test Condition300V, 6.5A, 1kOhm, 5V
Reverse Recovery Time (trr)-
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package/ CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageTO-252, (D-Pak)

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Fairchild Semiconductor 单 IGBT 产品 FGD3440G2-F085

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