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FGA6065ADF

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单 IGBT

INSULATED GATE BIPOLAR TRANSISTO

参数名称参数值
Product StatusActive
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)650 V
Current - Collector (Ic) (Max)120 A
Current - Collector Pulsed (Icm)180 A
Vce(on) (Max) @ Vge, Ic2.3V @ 15V, 60A
Power - Max306 W
Switching Energy2.46mJ (on), 520µJ (off)
Input TypeStandard
Gate Charge84 nC
Td (on/off) @ 25°C25.6ns/71ns
Test Condition400V, 60A, 6Ohm, 15V
Reverse Recovery Time (trr)110 ns
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package/ CaseTO-3P-3, SC-65-3
Supplier Device PackageTO-3PN

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Fairchild Semiconductor 单 IGBT 产品 FGA6065ADF

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