参数名称 | 参数值 |
---|---|
Product Status | Obsolete |
IGBT Type | NPT |
Voltage - Collector Emitter Breakdown (Max) | 1200 V |
Current - Collector (Ic) (Max) | 35 A |
Current - Collector Pulsed (Icm) | 80 A |
Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 10A |
Power - Max | 298 W |
Switching Energy | 850µJ (on), 800µJ (off) |
Input Type | Standard |
Gate Charge | 100 nC |
Td (on/off) @ 25°C | 23ns/165ns |
Test Condition | 960V, 10A, 10Ohm, 15V |
Reverse Recovery Time (trr) | 70 ns |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package/ Case | TO-247-3 |
Supplier Device Package | TO-247-3 |
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onsemi 单 IGBT 产品 HGTG10N120BND
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