参数名称 | 参数值 |
---|---|
Product Status | Last Time Buy |
IGBT Type | Trench Field Stop |
Voltage - Collector Emitter Breakdown (Max) | 650 V |
Current - Collector (Ic) (Max) | - |
Current - Collector Pulsed (Icm) | 120 A |
Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 30A |
Power - Max | - |
Switching Energy | - |
Input Type | Standard |
Gate Charge | - |
Td (on/off) @ 25°C | - |
Test Condition | - |
Reverse Recovery Time (trr) | - |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Package/ Case | Die |
Supplier Device Package | Die |
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onsemi 单 IGBT 产品 NGTD13T65F2WP
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