参数名称 | 参数值 |
---|---|
Product Status | Active |
IGBT Type | Trench |
Voltage - Collector Emitter Breakdown (Max) | 650 V |
Current - Collector (Ic) (Max) | 100 A |
Current - Collector Pulsed (Icm) | - |
Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 50A |
Power - Max | 250 W |
Switching Energy | 830µJ (on), 670µJ (off) |
Input Type | Standard |
Gate Charge | 36 nC |
Td (on/off) @ 25°C | 20ns/93ns |
Test Condition | 400V, 50A, 16Ohm, 15V |
Reverse Recovery Time (trr) | 65 ns |
Operating Temperature | 175°C (TJ) |
Mounting Type | Through Hole |
Package/ Case | TO-247-3 |
Supplier Device Package | TO-247A |
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Renesas Electronics Corporation 单 IGBT 产品 RBN50H65T1FPQ-A0#CB0
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