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HGT1S10N120BNST

¥20.52
单 IGBT
onsemi

IGBT 1200V 35A 298W TO263AB

参数名称参数值
Product StatusActive
IGBT TypeNPT
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector (Ic) (Max)35 A
Current - Collector Pulsed (Icm)80 A
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 10A
Power - Max298 W
Switching Energy320µJ (on), 800µJ (off)
Input TypeStandard
Gate Charge100 nC
Td (on/off) @ 25°C23ns/165ns
Test Condition960V, 10A, 10Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package/ CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageD²PAK (TO-263)

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