| 参数名称 | 参数值 |
|---|---|
| Product Status | Active |
| IGBT Type | Trench Field Stop |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector (Ic) (Max) | 55 A |
| Current - Collector Pulsed (Icm) | 90 A |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 30A |
| Power - Max | 188 W |
| Switching Energy | 870µJ (on), 300µJ (off) |
| Input Type | Standard |
| Gate Charge | 70 nC |
| Td (on/off) @ 25°C | 24ns/159ns |
| Test Condition | 400V, 30A, 22Ohm, 15V |
| Reverse Recovery Time (trr) | 75 ns |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Package/ Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package | PG-TO263-3 |
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Infineon Technologies 单 IGBT 产品 IKB30N65EH5ATMA1
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