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G5S12040BM

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二极管阵列

SIC SCHOTTKY DIODE 1200V 40A 3-P

参数名称参数值
Product StatusActive
Diode Configuration1 Pair Common Cathode
TechnologySiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)1200 V
Current - Average Rectified (Io) (per Diode)62A (DC)
Voltage - Forward (Vf) (Max) @ If1.7 V @ 20 A
SpeedNo Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)0 ns
Current - Reverse Leakage @ Vr50 µA @ 1200 V
Operating Temperature - Junction-55°C ~ 175°C
Mounting TypeThrough Hole
Package/ CaseTO-247-3
Supplier Device PackageTO-247AB

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Global Power Technology Co. Ltd 二极管阵列 产品 G5S12040BM

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