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WNSC5D20650CW6Q

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二极管阵列

DIODE SIL CARB 650V 20A TO247-3

参数名称参数值
Product StatusActive
Diode Configuration1 Pair Common Cathode
TechnologySiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)650 V
Current - Average Rectified (Io) (per Diode)20A
Voltage - Forward (Vf) (Max) @ If1.7 V @ 20 A
SpeedNo Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)0 ns
Current - Reverse Leakage @ Vr50 µA @ 650 V
Operating Temperature - Junction-55°C ~ 175°C
Mounting TypeThrough Hole
Package/ CaseTO-247-3
Supplier Device PackageTO-247-3

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WeEn Semiconductors Co., Ltd 二极管阵列 产品 WNSC5D20650CW6Q

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