| 参数名称 | 参数值 |
|---|---|
| Product Status | Obsolete |
| Diode Configuration | - |
| Technology | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Current - Average Rectified (Io) (per Diode) | - |
| Voltage - Forward (Vf) (Max) @ If | 790 mV @ 2 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | 10 µA @ 100 V |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Mounting Type | Surface Mount |
| Package/ Case | Die |
| Supplier Device Package | Die |
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Vishay General Semiconductor – Diodes Division 二极管阵列 产品 SX061H100S4PT
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