参数名称 | 参数值 |
---|---|
Product Status | Obsolete |
Diode Configuration | 1 Pair Common Cathode |
Technology | SiC (Silicon Carbide) Schottky |
Voltage - DC Reverse (Vr) (Max) | 650 V |
Current - Average Rectified (Io) (per Diode) | 10A (DC) |
Voltage - Forward (Vf) (Max) @ If | 1.55 V @ 10 A |
Speed | No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr) | - |
Current - Reverse Leakage @ Vr | 200 µA @ 600 V |
Operating Temperature - Junction | 175°C (Max) |
Mounting Type | Through Hole |
Package/ Case | TO-247-3 |
Supplier Device Package | TO-247 |
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