参数名称 | 参数值 |
---|---|
Product Status | Active |
Diode Configuration | 1 Pair Common Cathode |
Technology | Standard |
Voltage - DC Reverse (Vr) (Max) | 200 V |
Current - Average Rectified (Io) (per Diode) | 100A |
Voltage - Forward (Vf) (Max) @ If | 1.3 V @ 100 A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | 75 ns |
Current - Reverse Leakage @ Vr | 25 µA @ 50 V |
Operating Temperature - Junction | -55°C ~ 150°C |
Mounting Type | Chassis Mount |
Package/ Case | Three Tower |
Supplier Device Package | Three Tower |
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GeneSiC Semiconductor 二极管阵列 产品 MURT20020
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