参数名称 | 参数值 |
---|---|
Product Status | Active |
Diode Configuration | 1 Pair Common Cathode |
Technology | Schottky |
Voltage - DC Reverse (Vr) (Max) | 100 V |
Current - Average Rectified (Io) (per Diode) | 200A (DC) |
Voltage - Forward (Vf) (Max) @ If | 840 mV @ 100 A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | - |
Current - Reverse Leakage @ Vr | 5 mA @ 20 V |
Operating Temperature - Junction | - |
Mounting Type | Chassis Mount |
Package/ Case | Twin Tower |
Supplier Device Package | Twin Tower |
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GeneSiC Semiconductor 二极管阵列 产品 MBR200100CT
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