参数名称 | 参数值 |
---|---|
Product Status | Active |
Diode Configuration | 1 Pair Common Anode |
Technology | Schottky |
Voltage - DC Reverse (Vr) (Max) | 200 V |
Current - Average Rectified (Io) (per Diode) | 60A |
Voltage - Forward (Vf) (Max) @ If | 920 mV @ 60 A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | - |
Current - Reverse Leakage @ Vr | 1 mA @ 200 V |
Operating Temperature - Junction | -55°C ~ 150°C |
Mounting Type | Chassis Mount |
Package/ Case | Three Tower |
Supplier Device Package | Three Tower |
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GeneSiC Semiconductor 二极管阵列 产品 MBRT120200R
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