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G4S06515AT

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单二极管

DIODE SIL CARB 650V 36A TO220AC

参数名称参数值
Product StatusActive
TechnologySiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)650 V
Current - Average Rectified (Io)36A
Voltage - Forward (Vf) (Max) @ If1.7 V @ 15 A
SpeedNo Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)0 ns
Current - Reverse Leakage @ Vr50 µA @ 650 V
Capacitance @ Vr, F645pF @ 0V, 1MHz
Mounting TypeThrough Hole
Package/ CaseTO-220-2
Supplier Device PackageTO-220AC
Operating Temperature - Junction-55°C ~ 175°C

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Global Power Technology Co. Ltd 单二极管 产品 G4S06515AT

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