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G5S12010C

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单二极管

DIODE SIL CARB 1.2KV 34.2A TO252

参数名称参数值
Product StatusActive
TechnologySiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)1200 V
Current - Average Rectified (Io)34.2A
Voltage - Forward (Vf) (Max) @ If1.7 V @ 10 A
SpeedNo Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)0 ns
Current - Reverse Leakage @ Vr50 µA @ 1200 V
Capacitance @ Vr, F825pF @ 0V, 1MHz
Mounting TypeSurface Mount
Package/ CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageTO-252
Operating Temperature - Junction-55°C ~ 175°C

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