| 参数名称 | 参数值 |
|---|---|
| Product Status | Active |
| Diode Configuration | - |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) (per Diode) | - |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 10 A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 40 µA @ 650 V |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Mounting Type | Through Hole |
| Package/ Case | TO-247-3 |
| Supplier Device Package | TO-247-3 |
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