参数名称 | 参数值 |
---|---|
Product Status | Obsolete |
Diode Configuration | 2 Independent |
Technology | Schottky |
Voltage - DC Reverse (Vr) (Max) | 30 V |
Current - Average Rectified (Io) (per Diode) | 1A |
Voltage - Forward (Vf) (Max) @ If | 450 mV @ 1 A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | 10 ns |
Current - Reverse Leakage @ Vr | 360 µA @ 15 V |
Operating Temperature - Junction | -55°C ~ 125°C |
Mounting Type | Surface Mount |
Package/ Case | 4-UFDFN |
Supplier Device Package | 4-ECSP1608 |
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onsemi 二极管阵列 产品 SS1003EJ-TR
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