| 参数名称 | 参数值 |
|---|---|
| Product Status | Active |
| Diode Configuration | 2 Independent |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Current - Average Rectified (Io) (per Diode) | 45A |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 45 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | 300 µA @ 1200 V |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Mounting Type | Chassis Mount |
| Package/ Case | SOT-227-4, miniBLOC |
| Supplier Device Package | SOT-227 |
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SemiQ 二极管阵列 产品 GHXS045A120S-D3
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