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GHXS100B065S-D3

¥338.47
二极管阵列
SemiQ

SIC SBD PARALLEL POWER MODULE 65

参数名称参数值
Product StatusActive
Diode Configuration2 Independent
TechnologySiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)650 V
Current - Average Rectified (Io) (per Diode)193A (DC)
Voltage - Forward (Vf) (Max) @ If1.65 V @ 100 A
SpeedNo Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)0 ns
Current - Reverse Leakage @ Vr250 µA @ 650 V
Operating Temperature - Junction-55°C ~ 175°C
Mounting TypeChassis Mount
Package/ CaseSOT-227-4, miniBLOC
Supplier Device PackageSOT-227

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SemiQ 二极管阵列 产品 GHXS100B065S-D3

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