参数名称 | 参数值 |
---|---|
Product Status | Active |
Diode Configuration | 2 Independent |
Technology | SiC (Silicon Carbide) Schottky |
Voltage - DC Reverse (Vr) (Max) | 650 V |
Current - Average Rectified (Io) (per Diode) | 193A (DC) |
Voltage - Forward (Vf) (Max) @ If | 1.65 V @ 100 A |
Speed | No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr) | 0 ns |
Current - Reverse Leakage @ Vr | 250 µA @ 650 V |
Operating Temperature - Junction | -55°C ~ 175°C |
Mounting Type | Chassis Mount |
Package/ Case | SOT-227-4, miniBLOC |
Supplier Device Package | SOT-227 |
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SemiQ 二极管阵列 产品 GHXS100B065S-D3
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