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ES1DLHR3G

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单二极管

DIODE GEN PURP 200V 1A SUB SMA

参数名称参数值
Product StatusActive
TechnologyStandard
Voltage - DC Reverse (Vr) (Max)200 V
Current - Average Rectified (Io)1A
Voltage - Forward (Vf) (Max) @ If950 mV @ 1 A
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)35 ns
Current - Reverse Leakage @ Vr5 µA @ 200 V
Capacitance @ Vr, F10pF @ 4V, 1MHz
Mounting TypeSurface Mount
Package/ CaseDO-219AB
Supplier Device PackageSub SMA
Operating Temperature - Junction-55°C ~ 150°C

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Taiwan Semiconductor 单二极管 产品 ES1DLHR3G

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