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RGL41GHE3/96

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单二极管

DIODE GEN PURP 400V 1A DO213AB

参数名称参数值
Product StatusActive
TechnologyStandard
Voltage - DC Reverse (Vr) (Max)400 V
Current - Average Rectified (Io)1A
Voltage - Forward (Vf) (Max) @ If1.3 V @ 1 A
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)150 ns
Current - Reverse Leakage @ Vr5 µA @ 400 V
Capacitance @ Vr, F15pF @ 4V, 1MHz
Mounting TypeSurface Mount
Package/ CaseDO-213AB, MELF (Glass)
Supplier Device PackageDO-213AB
Operating Temperature - Junction-65°C ~ 175°C

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Vishay General Semiconductor – Diodes Division 单二极管 产品 RGL41GHE3/96

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