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BY299P-E3/54

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单二极管

DIODE GEN PURP 800V 2A DO201AD

参数名称参数值
Product StatusObsolete
TechnologyStandard
Voltage - DC Reverse (Vr) (Max)800 V
Current - Average Rectified (Io)2A
Voltage - Forward (Vf) (Max) @ If1.3 V @ 3 A
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)500 ns
Current - Reverse Leakage @ Vr10 µA @ 800 V
Capacitance @ Vr, F28pF @ 4V, 1MHz
Mounting TypeThrough Hole
Package/ CaseDO-201AD, Axial
Supplier Device PackageDO-201AD
Operating Temperature - Junction-50°C ~ 125°C

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Vishay General Semiconductor – Diodes Division 单二极管 产品 BY299P-E3/54

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