| 参数名称 | 参数值 |
|---|---|
| Product Status | Obsolete |
| FET Type | P-Channel |
| Voltage - Breakdown (V(BR)GSS) | 30 V |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Drain (Idss) @ Vds (Vgs=0) | 20 mA @ 15 V |
| Current Drain (Id) - Max | - |
| Voltage - Cutoff (VGS off) @ Id | 5 V @ 10 nA |
| Input Capacitance (Ciss) (Max) @ Vds | 8pF @ 10V (VGS) |
| Resistance - RDS(On) | 85 Ohms |
| Power - Max | 400 mW |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Package/ Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Supplier Device Package | TO-92-3 |
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NXP Semiconductors JFET 产品 J174,126
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