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W66BM6NBUAGJ

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记忆

IC DRAM 2GBIT LVSTL 11 200WFBGA

参数名称参数值
Product StatusNot For New Designs
DigiKey ProgrammableNot Verified
Memory TypeVolatile
Memory FormatDRAM
TechnologySDRAM - Mobile LPDDR4X
Memory Size2Gbit
Memory Organization128M x 16
Memory InterfaceLVSTL_11
Clock Frequency1.866 GHz
Write Cycle Time - Word, Page18ns
Access Time3.5 ns
Voltage - Supply1.06V ~ 1.17V, 1.7V ~ 1.95V
Operating Temperature-40°C ~ 105°C (TC)
Mounting TypeSurface Mount
Package/ Case200-WFBGA
Supplier Device Package200-WFBGA (10x14.5)

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Winbond Electronics Corporation 记忆 产品 W66BM6NBUAGJ

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