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W63AH6NBVABE TR

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记忆

IC DRAM 1GBIT HSUL 12 178VFBGA

参数名称参数值
Product StatusActive
DigiKey ProgrammableNot Verified
Memory TypeVolatile
Memory FormatDRAM
TechnologySDRAM - Mobile LPDDR3
Memory Size1Gbit
Memory Organization64M x 16
Memory InterfaceHSUL_12
Clock Frequency800 MHz
Write Cycle Time - Word, Page15ns
Access Time5.5 ns
Voltage - Supply1.14V ~ 1.3V, 1.7V ~ 1.95V
Operating Temperature-25°C ~ 85°C (TC)
Mounting TypeSurface Mount
Package/ Case178-VFBGA
Supplier Device Package178-VFBGA (11x11.5)

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Winbond Electronics Corporation 记忆 产品 W63AH6NBVABE TR

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