参数名称 | 参数值 |
---|---|
Product Status | Obsolete |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 15V |
Frequency - Transition | 500MHz |
Noise Figure (dB Typ @ f) | 4.5dB @ 450MHz |
Gain | 12.5dB ~ 21dB @ 450MHz |
Power - Max | 200mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 3mA, 1V |
Current - Collector (Ic) (Max) | 40mA |
Operating Temperature | -65°C ~ 200°C (TJ) |
Mounting Type | Through Hole |
Package/ Case | TO-206AF, TO-72-4 Metal Can |
Supplier Device Package | TO-72 |
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Microsemi 双极射频晶体管 产品 2N2857
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