| 参数名称 | 参数值 |
|---|---|
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta), 21A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 10.4mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 15 V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta), 15W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-HSMT (3.2x3) |
| Package/ Case | 8-PowerVDFN |
新闻资讯
ROHM Semiconductor 单 FET、MOSFET 产品 RQ3E100BNTB1
作为ROHM Semiconductor优质且资深的代理服务商，深圳凌创辉电子有限公司在为您采购RQ3E100BNTB1时，能够保证原装进口的品质保障以外，价格也是业界最优的，找我们买RQ3E100BNTB1绝对的现货正品，需要报价和咨询请您随时联系我们，同时我们为方便您了解RQ3E100BNTB1产品详情，我们提供了pdf在线观看参数资料，助您轻松采购。
RQ3E100BNTB1供应商,RQ3E100BNTB1现货,RQ3E100BNTB1代理商,RQ3E100BNTB1pdf参数资料,买RQ3E100BNTB1,RQ3E100BNTB1报价,RQ3E100BNTB1库存
