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RV4E031RPTCR1

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单 FET、MOSFET

MOSFET P-CH 30V 3.1A DFN1616-6

参数名称参数值
Product StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C3.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs105mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs4.8 nC @ 5 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds460 pF @ 10 V
FET Feature-
Power Dissipation (Max)1.5W
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount, Wettable Flank
Supplier Device PackageDFN1616-6W
Package/ Case6-PowerWFDFN

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ROHM Semiconductor 单 FET、MOSFET 产品 RV4E031RPTCR1

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